NEW ORIGINAL FF800R12KL4C POWER MODULE SUPPLIED BY FFIISS

welcome to GTV today I will be showing you power ex IGBT modules IGBTs or insulated gate bipolar transistors are switching transistors that is controlled by voltage applied to the gate terminal device operation and structure are similar to those of an insulated gate field effect transistor more commonly known as a MOSFET the principle difference between the two device types is that the IGBT uses conductivity modulation to reduce on state conduction losses power ex IGBT modules are designed to be rugged low loss and easy to use use of advanced processing technologies gives low on state saturation voltages while maintaining the high switching speed needed for 20 kilohertz operation the power x modules can consist of a single IGBT transistor in a single configuration to ID VT transistors in a half bridge configuration for igbts in an H bridge configuration or with six IGBT transistors in a