Description
GT109B Material p-n-junction: Ge The structure of the transistor: PNP Limiting continuous power dissipation Collector (Pc) of the transistor: 0.03 W Limiting DC collector-base (Ucb): 10 V Limit constant collector-emitter voltage (Uce) transistor 6 V Limiting DC voltage emitter-base (Ueb): 0 V Limiting DC collector transistor (Ic max): 0.02 A Limiting temperature pn junction (Tj): 80 C Cutoff frequency of the current transfer ratio (Ft) of the transistor 1 MHz Collector junction capacitance (Cc): 30 pF Static current transfer ratio in the common-emitter (Hfe), : 35 ......80
Transistors Germanium GT109B analogue 2N105, 2N77, OC58 USSR 20 pcs
Current Price
$17.95
Average
$17.95
Min Price
$17.95
Max Price
$17.95
Description
GT109B Material p-n-junction: Ge The structure of the transistor: PNP Limiting continuous power dissipation Collector (Pc) of the transistor: 0.03 W Limiting DC collector-base (Ucb): 10 V Limit constant collector-emitter voltage (Uce) transistor 6 V Limiting DC voltage emitter-base (Ueb): 0 V Limiting DC collector transistor (Ic max): 0.02 A Limiting temperature pn junction (Tj): 80 C Cutoff frequency of the current transfer ratio (Ft) of the transistor 1 MHz Collector junction capacitance (Cc): 30 pF Static current transfer ratio in the common-emitter (Hfe), : 35 ......80
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