Description
KP907A Transistors planar silicon insulated-gate field-and n-channel type. KP907A FETs are used to amplify and generate signals at frequencies up to 1500 MHz as well as for use in high-speed switching devices in the nanosecond range. KP907A: Structure transistor: and an insulated gate n-channel; RCI t max - Maximum power dissipation Drain-source to the heat sink: 11.5 W; U ds max - The maximum drain-source voltage: 60 V; Uzs max - Maximum gate-drain voltage: 70 V; Uzi max - The maximum gate-source voltage: 30 V; Ic - Drain current (DC): 2.7 A; Ic early - Initial drain current: 100 mA; Ic ost - Residual Current: not more than 10 mA; S - Mutual conductance: 110 ... 200 mA / V (20V, 0.5A); S12i - Capacity feedback in the common-source with a short circuit at the input AC: not more than 3 pF; Ku.r - Power gain: not less than 4 dB at 1 GHz
Transistors Silicon KP907A Military USSR 1 pcs
Current Price
$18.5
Average
$18.5
Min Price
$18.5
Max Price
$18.5
Description
KP907A Transistors planar silicon insulated-gate field-and n-channel type. KP907A FETs are used to amplify and generate signals at frequencies up to 1500 MHz as well as for use in high-speed switching devices in the nanosecond range. KP907A: Structure transistor: and an insulated gate n-channel; RCI t max - Maximum power dissipation Drain-source to the heat sink: 11.5 W; U ds max - The maximum drain-source voltage: 60 V; Uzs max - Maximum gate-drain voltage: 70 V; Uzi max - The maximum gate-source voltage: 30 V; Ic - Drain current (DC): 2.7 A; Ic early - Initial drain current: 100 mA; Ic ost - Residual Current: not more than 10 mA; S - Mutual conductance: 110 ... 200 mA / V (20V, 0.5A); S12i - Capacity feedback in the common-source with a short circuit at the input AC: not more than 3 pF; Ku.r - Power gain: not less than 4 dB at 1 GHz
Price will be lower
in next 2 weeks
in next 2 weeks
According to the data, price will be lower in next two weeks, so not waste your money and track better price!
