Description
10PCS RE200B Pyroelectric Infrared Sensor
Description:
Sensitive area of 2.0mm x 1.0mm
A silicon substrate material
Substrate thickness of 0.5mm
Wavelength 7-14μm
The average transmittance of> 75%
The output signal is>2.5V
(420°k blackbody 1Hz modulation frequency bandwidth of 0.3-3.0Hz 72.5db gain)
Noise<200mV
(mVp-p) (25℃)
Balance<20%
Operating voltage 2.2-15V
Current 8.5-24μA
(VD = 10V, Rs = 47kΩ, 25℃)
Source voltage of 0.4-1.1V
(VD = 10V, Rs = 47kΩ, 25℃)
Operating temperature -20℃ - +70℃
Storage temperature -35℃ - +80℃
Field of view 139°×126°
Package Includes:
10 * RE200B Pyroelectric Infrared Sensor
Description:
Sensitive area of 2.0mm x 1.0mm
A silicon substrate material
Substrate thickness of 0.5mm
Wavelength 7-14μm
The average transmittance of> 75%
The output signal is>2.5V
(420°k blackbody 1Hz modulation frequency bandwidth of 0.3-3.0Hz 72.5db gain)
Noise<200mV
(mVp-p) (25℃)
Balance<20%
Operating voltage 2.2-15V
Current 8.5-24μA
(VD = 10V, Rs = 47kΩ, 25℃)
Source voltage of 0.4-1.1V
(VD = 10V, Rs = 47kΩ, 25℃)
Operating temperature -20℃ - +70℃
Storage temperature -35℃ - +80℃
Field of view 139°×126°
Package Includes:
10 * RE200B Pyroelectric Infrared Sensor
HiLetgo 10pcs RE200B SN200B00 PIR Human Infrared Radial Sensor RE200B Dual Pyroelectric Sensor 2.2-15V
Current Price
$8.79
Average
$6.39
Min Price
$5.49
Max Price
$8.79
Price dynamics
27%
Description
10PCS RE200B Pyroelectric Infrared Sensor
Description:
Sensitive area of 2.0mm x 1.0mm
A silicon substrate material
Substrate thickness of 0.5mm
Wavelength 7-14μm
The average transmittance of> 75%
The output signal is>2.5V
(420°k blackbody 1Hz modulation frequency bandwidth of 0.3-3.0Hz 72.5db gain)
Noise<200mV
(mVp-p) (25℃)
Balance<20%
Operating voltage 2.2-15V
Current 8.5-24μA
(VD = 10V, Rs = 47kΩ, 25℃)
Source voltage of 0.4-1.1V
(VD = 10V, Rs = 47kΩ, 25℃)
Operating temperature -20℃ - +70℃
Storage temperature -35℃ - +80℃
Field of view 139°×126°
Package Includes:
10 * RE200B Pyroelectric Infrared Sensor
Description:
Sensitive area of 2.0mm x 1.0mm
A silicon substrate material
Substrate thickness of 0.5mm
Wavelength 7-14μm
The average transmittance of> 75%
The output signal is>2.5V
(420°k blackbody 1Hz modulation frequency bandwidth of 0.3-3.0Hz 72.5db gain)
Noise<200mV
(mVp-p) (25℃)
Balance<20%
Operating voltage 2.2-15V
Current 8.5-24μA
(VD = 10V, Rs = 47kΩ, 25℃)
Source voltage of 0.4-1.1V
(VD = 10V, Rs = 47kΩ, 25℃)
Operating temperature -20℃ - +70℃
Storage temperature -35℃ - +80℃
Field of view 139°×126°
Package Includes:
10 * RE200B Pyroelectric Infrared Sensor
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